(Hong Kong)
Product Summary
Drain Current (Max): 14 A
Frequency (Max): Not Required MHz
Gate-Source Voltage (Max): 20 V
Output Power (Max): Not Required W
Power Dissipation: 88 W
Mounting: Through Hole
Noise Figure: Not Required dB
Drain-Source On-Res: 0.16 ohm
Operating Temp Range: -55C to 175C
Package Type: TO-220AB
Pin Count: 3 +Tab
Polarity: N
Type: Power MOSFET
Number of Elements: 1
Operating Temperature Classification: Military
Channel Mode: Enhancement
Drain Efficiency: Not Required %
Drain-Source On-Volt: 100 V
Power Gain : Not Required dB
Rad Hardened: No
Continuous Drain Current: 14 A
DELETED: Compliant
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
 IRF530PBF |
Vishay/Siliconix |
MOSFET N-Chan 100V 14 Amp |
Data Sheet |
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| Image | Part No | Mfg | Description | |
Pricing (USD) |
Quantity | ||||||||||||
 |
IRF500 |
Other |
|
Data Sheet |
Negotiable |
|
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|
IRF510 |
Vishay/Siliconix |
MOSFET N-Chan 100V 5.6 Amp |
Data Sheet |
|
|
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|
IRF510, SiHF510 |
Other |
|
Data Sheet |
Negotiable |
|
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|
IRF510_R4941 |
Fairchild Semiconductor |
MOSFET TO-220AB N-Ch Power |
Data Sheet |
Negotiable |
|
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|
IRF510A |
Fairchild Semiconductor |
MOSFET 100V .2 OHM 33W |
Data Sheet |
Negotiable |
|
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|
IRF510A_Q |
Fairchild Semiconductor |
MOSFET 100V .2 Ohm 33W |
Data Sheet |
Negotiable |
|
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