Product Summary

Configuration: Single
Collector - Emitter Voltage VCEO: 1200 V
Collector - emitter saturation voltage: 2.05 V
Gate / Emitter Voltage: + / - 20 V
In the 25 C Continuous Collector Current: 80 A
Gate - Emitter Leakage Current: 600 nA
Power Dissipation: 483 W
Minimum Operating Temperature -40 ° C
Maximum Operating Temperature: + 175 C
Package / Case: TO-247-3
Packaging: Tube
Maximum continuous collector current Ic: 80 A
Minimum Operating Temperature: - 40 C
Mounting Style: Through Hole
Width of 5.16mm
Dimensions 16.03 x 5.16 x 21.1mm

Diagrams

Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
IKW40N120H3
IKW40N120H3
Infineon Technologies
IGBT Transistors IGBT PRODUCTS
Data Sheet
0-130: $4.54
130-250: $4.17
250-500: $3.80
500-1000: $3.31
Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
IKW40N120H3
IKW40N120H3
Infineon Technologies
IGBT Transistors IGBT PRODUCTS
Data Sheet
0-130: $4.54
130-250: $4.17
250-500: $3.80
500-1000: $3.31
IKW40N120T2
IKW40N120T2
Infineon Technologies
IGBT Transistors LOW LOSS DuoPack 1200V 40A
Data Sheet
0-130: $4.91
130-250: $4.52
250-500: $4.12
500-1000: $3.59
IKW40N60H3
IKW40N60H3
Infineon Technologies
IGBT Transistors 600V 40A 306W
Data Sheet
0-118: $3.04
118-250: $2.74
250-500: $2.47
500-1000: $2.08
IKW40T120
IKW40T120
Infineon Technologies
IGBT Transistors LOW LOSS DuoPack 1200V 40A
Data Sheet
0-130: $5.05
130-250: $4.64
250-500: $4.24
500-1000: $3.68